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Auger Recombination with Deep Impurities in Indirect Band Gap Semiconductors
Author(s) -
Haug A.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221080219
Subject(s) - recombination , impurity , auger effect , semiconductor , silicon , auger , band gap , lattice (music) , atomic physics , condensed matter physics , materials science , relaxation (psychology) , chemistry , physics , optoelectronics , quantum mechanics , biology , biochemistry , neuroscience , acoustics , gene
The theory of Auger recombination involving traps is extended to indirect band gap semiconductors, indeed with special emphasis on deep impurities. Effects of the strong localization and of the lattice relaxation combined with these impurities are taken into account. The results give an explanation of the influence of goldimpurities on the recombination in silicon.