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Electron–Hole Plasma Expansion in Direct‐Gap GaAs 1− x P x
Author(s) -
Modesti S.,
Frova A.,
Staehli J. L.,
Guzzi M.,
Capizzi M.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221080134
Subject(s) - plasma , excited state , recombination , excitation , photoluminescence , ternary operation , atomic physics , electron density , crossover , electron , materials science , condensed matter physics , physics , chemistry , optoelectronics , biochemistry , quantum mechanics , computer science , gene , programming language , artificial intelligence
The e‐h plasma in the ternary alloy GaAs 1− x P 2 below direct‐indirect crossover is studied at 2 K by means of very high excitation photoluminescence measurements. The most interesting feature observed is an extremely efficient expansion of the excited region when the particle density reaches the value n* needed to minimize the free energy. This behaviour and the corresponding spectral evolution with power density are accounted for by a model where pressure‐induced flow of particles away from the pumped region becomes competitive with recombination mechanisms.