Energy Levels of Intrinsic and Extrinsic Stacking Faults in Silicon | Zendy

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Energy Levels of Intrinsic and Extrinsic Stacking Faults in Silicon

Author(s) -

Marklund S.

Publication year - 1981

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221080113

Subject(s) - stacking , pseudopotential , conduction band , condensed matter physics , valence (chemistry) , materials science , silicon , valence band , thermal conduction , physics , band gap , optoelectronics , electron , quantum mechanics , nuclear magnetic resonance , composite material

The electronic interface states of ideal intrinsic and extrinsic stacking faults are calculated using an empirical pseudopotential. The results show two occupied bands above the valence band top (≈ E v + 0.1 eV) for both the faults. No localised states near the conduction band are found which contradicts experimental results for the extrinsic faults interpreted as levels at ≈ E c − 0.1 eV.

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