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Energy Levels of Intrinsic and Extrinsic Stacking Faults in Silicon
Author(s) -
Marklund S.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221080113
Subject(s) - stacking , pseudopotential , conduction band , condensed matter physics , valence (chemistry) , materials science , silicon , valence band , thermal conduction , physics , band gap , optoelectronics , electron , quantum mechanics , nuclear magnetic resonance , composite material
The electronic interface states of ideal intrinsic and extrinsic stacking faults are calculated using an empirical pseudopotential. The results show two occupied bands above the valence band top (≈ E v + 0.1 eV) for both the faults. No localised states near the conduction band are found which contradicts experimental results for the extrinsic faults interpreted as levels at ≈ E c − 0.1 eV.