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Theoretical description of planar channeling process at small depths
Author(s) -
Kührt E.,
Wedell R.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221070229
Subject(s) - planar , yield (engineering) , basis (linear algebra) , ion , process (computing) , physics , computational physics , statistical physics , geometry , mathematics , computer science , quantum mechanics , thermodynamics , computer graphics (images) , operating system
A model for the description of planar channeling processes on the basis of the solution of the Fokker‐Planck equation is developped. It is applied for the calculation of the backscattering yield of protons and He‐ions in planar channels of several single crystals. The results are compared with recent measurements.