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On the theory of resonance Raman scattering in heavily doped degenerate semiconductors
Author(s) -
Quang Doan Nhat,
Esser B.,
Keiper R.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221070218
Subject(s) - condensed matter physics , raman scattering , scattering , resonance (particle physics) , degenerate semiconductor , dielectric , semiconductor , phonon , doping , dispersion (optics) , x ray raman scattering , degenerate energy levels , scattering amplitude , impurity , materials science , raman spectroscopy , physics , atomic physics , optics , quantum mechanics
The influence of the random impurity potential on the dispersion of the one‐phonon resonance Raman scattering of a heavily doped p‐type degenerate semiconductor is investigated. It is proved that a local scattering amplitude representable by the difference of local dielectric functions may be introduced. The local coordinate dependence is due to the fluctuations of the impurity potentia. The resonance scattering cross‐section of the system is shown to be proportional to the modulus square of the difference of configurational averaged dielectric functions. The dispersion curve is dominated by the peaks occurring at the energy of the Burstein‐Moss shift in the real part of the dielectric function.