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The model potential for charged centres in semiconductors
Author(s) -
Olejníková B.,
Hrivnák Ľ.,
Kedro M.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221070208
Subject(s) - photoionization , atomic physics , semiconductor , ionization , ionization energy , electron , electric field , ground state , energy (signal processing) , chemistry , physics , ion , quantum mechanics
The model potential of an electron U ( r ) = − e 2 /4πϵ 0 ϵ s r [1 + (ϵ s − 1) exp (‐β r )] is, appliedtodeep charged centres in semiconductors instead of the commonly used combination of Coulombic and δ‐function potentials. The ground‐state energy of such a centre, photoionization cross‐section, and ionization energy lowering due to an applied electric field are calculated for various values of the parameters β and the values m* and ϵ s corresponding to GaAs.
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