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Disorder‐induced broadening for free direct excitons in II–VI and III–V semiconducting mixed crystals
Author(s) -
Hennig D.,
Strehlow R.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221070129
Subject(s) - exciton , semiconductor , condensed matter physics , biexciton , scattering , materials science , chemistry , physics , optics , optoelectronics
A theoretical model is presented which is a modified version of an earlier description of indirect excitons in semiconductor mixed crystals. The influence of short‐range disorder on the broadening of free direct exciton lines from the scattering of the exciton by this disorder potential is studied. This leads for II–VI mixed crystals to a remarkable contribution to the observed disorder‐induced broadening of the exciton lines while for the III–V mixed crystals this contribution is negligibly small.