Recombination processes in 3 to 5 μm HgCdTe | Zendy

Calas J. | Zendy; Allègre J. | Zendy; Fau C. | Zendy

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Recombination processes in 3 to 5 μm HgCdTe

Author(s) -

Calas J.,

Allègre J.,

Fau C.

Publication year - 1981

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221070128

Subject(s) - atomic physics , valence band , auger effect , auger , recombination , ionization , photon energy , radiative transfer , atmospheric temperature range , population , photon , spontaneous emission , range (aeronautics) , physics , band gap , chemistry , materials science , condensed matter physics , optics , thermodynamics , quantum mechanics , ion , biochemistry , gene , laser , demography , sociology , composite material

An analysis of the decay of the excess majority carriers created by a photon beam with an energy higher than the energy gap is given. The recombination processes as well as the radiative process and also the Auger process are studied for Hg 1− x Cd x Te when x is nearly equal to 0.30, and their range of validity versus temperature is defined. From the continuity equations, the change of n e versus time is deduced when the recombination takes place in deep levels for a given injectpion rate n e 0. The capture cross section N Rτn0 of a given level at weak injection rate and at low temperature is obtained from the slope of In( n e ( t )). At higher temperature, the population of the re‐ combination level and the ionisation enefgy with respect to the valence band are determined from the slope of n e ( t ) at high injection rate and from the slope of In( n e ( t )) at weak injection.

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