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Density of states in amorphous Si:H
Author(s) -
Overhof H.,
Beyer W.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221070121
Subject(s) - pseudogap , density of states , condensed matter physics , seebeck coefficient , doping , amorphous silicon , amorphous solid , fermi level , conductivity , fermi energy , materials science , spin (aerodynamics) , electrical resistivity and conductivity , position (finance) , physics , silicon , chemistry , thermodynamics , crystalline silicon , cuprate , quantum mechanics , electron , organic chemistry , finance , economics , metallurgy
The density of states in the pseudogap of doped and undoped glow‐discharge prepared amorphous silicon is determined from transport data. Thermopower and conductivity are combined to calculate the position of the Fermi level as a function of temperature and doping rate. An effective density of states model is constructed that can account for these data. The true density of states is then determined under the assumption of a simple model for the correlation energy. It is shown that this model can account in detail for the doping dependence of the spin densities of various spin resonance lines recently reported.