Premium
Determination of static bond charge properties in Ga 1− x In x As and GaAs 1− y P y , solid solutions
Author(s) -
Pietsch U.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221070118
Subject(s) - charge (physics) , bond length , monocrystalline silicon , crystal (programming language) , crystallography , intensity (physics) , scattering , materials science , displacement (psychology) , atomic physics , amplitude , crystal structure , molecular physics , condensed matter physics , physics , chemistry , silicon , optics , psychology , computer science , metallurgy , quantum mechanics , psychotherapist , programming language
The integrated X‐ray intensity is determined for some monocrystalline reflections of (GaIn)As and Ga(AsP) layers, grown on GaAs substrates, nearly of those compositions where the scattering amplitude of the spherical atoms vanishes. These reflections are particularly apt to inform about the charge heaping up between next neighbours. By means of a bond charge model the experimental values are interpreted. Besides, data are obtained for the mean square displacement of the matrix atoms in the mixed crystal. The mean square displacements of the atoms in the mixed crystals cannot be extrapolated from those of the end components. The atoms of the substitutional sublattice oscillate less intensively than in its binary compounds. The bond charge, however, changes nearly linearly between the end components.