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Photogalvanic effect in piezoelectrics: Quantitative theory for interband transitions in gallium arsenide
Author(s) -
Belinicher V. I.,
Novikov V. N.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221070104
Subject(s) - gallium arsenide , photocurrent , polarization (electrochemistry) , gallium , materials science , condensed matter physics , piezoelectricity , arsenide , optoelectronics , chemistry , physics , metallurgy , composite material
A quantitative theory of the photogalvanic effect for interband transitions in gallium arsenide is proposed. The photocurrent is expressed through the known crystal constants, and it possesses a characteristic oscillatory dependence on polarization and frequency of light.
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