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Growth of Semiconducting CdF 2 :Ho 3+ Crystals and Study of Their Optical and Transport Properties
Author(s) -
Pouradier J. F.,
Grimouille G.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221060231
Subject(s) - impurity , conductivity , annealing (glass) , materials science , analytical chemistry (journal) , electrical resistivity and conductivity , condensed matter physics , chemistry , physics , metallurgy , organic chemistry , chromatography , quantum mechanics
A method for growing CdF 2 :Ln 3+ crystals (Ln lanthanide) is presented which results in semiconducting samples without any subsequent annealing. It is found that the main preparation parameters act on the optical and transport properties through a common parameter E σ . The infra‐red absorption of the samples as well as their conductivity are then analysed in the frame of a model with impurity‐banding and hopping conductivity, resulting in informations on the impurity density of states.