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Infrared Studies of Defects in ZnS Crystals Double‐Doped with Li and Al, Ga, and In
Author(s) -
Król A.,
Nazarewicz W.,
Gluziński L.,
Kozielski M. J.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221060209
Subject(s) - dopant , impurity , doping , lithium (medication) , zinc , absorption (acoustics) , materials science , infrared , infrared spectroscopy , crystallography , absorption spectroscopy , group (periodic table) , chemistry , analytical chemistry (journal) , inorganic chemistry , optoelectronics , optics , metallurgy , medicine , organic chemistry , chromatography , endocrinology , physics , composite material
Abstract Infrared absorption (360 to 500 cm −1 ) is studied in ZnS crystals doped with both, lithium and a group IIIA dopant. The dominant bands in the obtained absorption spectra can be ascribed to the localized vibrational modes of two types of defects: 1) unassociated Li on a Zn site, Li − Zn , and 2) pairs comprising substitutional Li on a Zn site and substitutional group IIIA impurity on the nearest Zn site, M + Zn ‐Li − Zn (M = Al, Ga, or In). Li in ZnS is found to have a considerable effect on atomic interactions in the neighbouring region and, therefore, cannot be regarded as a pure mass defect.