Infrared Studies of Defects in ZnS Crystals Double‐Doped with Li and Al, Ga, and In | Zendy

Król A. | Zendy; Nazarewicz W. | Zendy; Gluziński L. | Zendy; Kozielski M. J. | Zendy

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Infrared Studies of Defects in ZnS Crystals Double‐Doped with Li and Al, Ga, and In

Author(s) -

Król A.,

Nazarewicz W.,

Gluziński L.,

Kozielski M. J.

Publication year - 1981

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221060209

Subject(s) - dopant , impurity , doping , lithium (medication) , zinc , absorption (acoustics) , materials science , infrared , infrared spectroscopy , crystallography , absorption spectroscopy , group (periodic table) , chemistry , analytical chemistry (journal) , inorganic chemistry , optoelectronics , optics , metallurgy , medicine , organic chemistry , chromatography , endocrinology , physics , composite material

Infrared absorption (360 to 500 cm −1 ) is studied in ZnS crystals doped with both, lithium and a group IIIA dopant. The dominant bands in the obtained absorption spectra can be ascribed to the localized vibrational modes of two types of defects: 1) unassociated Li on a Zn site, Li − Zn , and 2) pairs comprising substitutional Li on a Zn site and substitutional group IIIA impurity on the nearest Zn site, M + Zn ‐Li − Zn (M = Al, Ga, or In). Li in ZnS is found to have a considerable effect on atomic interactions in the neighbouring region and, therefore, cannot be regarded as a pure mass defect.

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