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Theory of Multiphonon Resonance Raman Scattering as a Function of Temperature in Polar Semiconductors
Author(s) -
Trallero Giner C.,
Lang I. G.,
Pavlov S. T.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221060139
Subject(s) - raman scattering , phonon , x ray raman scattering , scattering , resonance (particle physics) , semiconductor , condensed matter physics , polar , polarization (electrochemistry) , raman spectroscopy , absorption cross section , phonon scattering , atomic physics , physics , chemistry , cross section (physics) , optics , quantum mechanics
A theory is developed which describes multiphonon resonance Raman scattering processes in polar semiconductors when the temperature is not very high and the primary radiation frequency is in the fundamental absorption region. A general formula for the scattering cross‐section for any Stokes or anti‐Stokes process is presented as a function of impinging radiation frequency and temperature in the event of excitonic state interaction with longitudinal polarization lattice vibrations (LO‐phonons) considered as intermediate states. It is shown that the multiphonon resonance Raman scattering cross‐section in any process is proportional, in the first order, to the exciton‐LO‐phonon interaction constant.