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Free‐Carrier Doping and Many‐Body Effects in Crystal Dynamics of Lead Sulphide Semiconductors
Author(s) -
Singh R. K.,
Singh K. P.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221060126
Subject(s) - doping , semiconductor , phonon , crystal (programming language) , raman spectroscopy , free carrier , materials science , dispersion (optics) , chemical physics , condensed matter physics , nanotechnology , chemistry , optoelectronics , optics , physics , computer science , programming language
The effects of free‐carrier doping and many‐body interactions are thoroughly investigated on the crystal dynamics of lead sulphide semiconductors. The model used for such investigations is developed by incorporating the doping effect of free‐carriers in the framework of a well known extended three‐body force shell model. The importance of these effects in predicting the phonon dispersion curves, two‐phonon Raman, and infrared spectra of the solid under consideration is briefly discussed.