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Dielectric Relaxation of Chalcogen—Vacancy Centres in Potassium Halide Crystals
Author(s) -
Kokott Ch.,
Fischer F.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221060117
Subject(s) - vacancy defect , chalcogen , halide , relaxation (psychology) , dielectric , potassium , dipole , impurity , ion , chemistry , materials science , crystallography , inorganic chemistry , optoelectronics , organic chemistry , psychology , social psychology
O −− , S −− , Se −− , and Te − ions dissolved in potassium halides form electric dipoles by association with an anionic vacancy. Reorientation stops below characteristic temperatures. They are measured by TSD (ITC) techniques. Crystals, not optimally quenched, can have additional TSD bands which are regarded as belonging to dipole‐impurity associates. Measured activation energies favour the chalcogen‐vacancy jump as the dominating relaxation mechanism at lower temperatures. Additional dielectric loss results above room temperature are compared with TSD data.