Premium
Properties of the R n and IR‐1 Luminescence Bands in Cadmium Sulfide Irradiated with Thermal Neutrons
Author(s) -
Ermolovich I. B.,
Gorbunov V. V.,
Matvievskaya G. I.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221060105
Subject(s) - luminescence , cadmium sulfide , irradiation , materials science , photosensitivity , semiconductor , neutron temperature , analytical chemistry (journal) , phonon , excitation , photoconductivity , neutron , atomic physics , optoelectronics , chemistry , physics , condensed matter physics , nuclear physics , chromatography , quantum mechanics , metallurgy
Specific features of R n (λ max equals; 728 nm) and IR‐1 (1040 nm) luminescence bands in CdS single crystals irradiated by thermal neutrons with doses 10 13 to 10 19 n/cm 2 were studied. The joint investigations of luminescence and photoconductivity dependences on temperature and on both the intensity and the wavelength of excitation confirm the R n and IR‐1 centre models proposed earlier, (V Cd · V S ) and (V Cd · In Cd ), respectively. The electron‐phonon interaction at radiative carrier capture on R n ‐centres are investigated, its parameters are obtained. At the first time it is found that at sufficiently low temperatures (≧ 160 K) the photosensitivity centres in monopolar, photosensitive semiconductor with wide band gap are the centres of effective nonradiative recombination due to high electron‐phonon interaction.