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Site Effects on N and O Luminescence in Electron‐Irradiated Neon Films
Author(s) -
Sayer R. J.,
Prince R. H.,
Duley W. W.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221050235
Subject(s) - neon , afterglow , luminescence , impurity , atomic physics , doping , electron , photoluminescence , spectral line , irradiation , spectroscopy , chemistry , analytical chemistry (journal) , materials science , physics , argon , condensed matter physics , gamma ray burst , organic chemistry , quantum mechanics , astronomy , chromatography , nuclear physics , optoelectronics
The visible luminescence spectrum of solid neon containing small amounts of N 2 or O 2 is investigated at 7.8 K using low‐energy electrons. Double‐doping experiments employing N 2 and × (where × is either O 2 , CO or Ar) are also carried out. Particular attention is given to the interpretation of the α(N 2 D— 4 S) transition of matrix‐trapped N atoms, and to a lesser extent the β(O 1 S— 1 D) transition of matrix‐isolated O atoms. The spectral intensity distribution within these transitions is photoelectrically recorded and for the long lived α transition, afterglow spectra are also presented. The structure of the α transition is shown to depend upon both the ratio of the N 2 and × concentrations as well as the total [N 2 + X] concentration, for total guest concentrations in the range from 0.01% to 0.1%. The components which comprise this emission arise from N atoms trapped in two characteristic sites denoted “substitutional”‐ and “impurity”‐affected. This same interpretation also applies in large part to the β transition of trapped O atoms.