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Role of Free Electrons and Holes in the Exciton Condensation Process in Semiconductors
Author(s) -
Ashkinadze B. M.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221050224
Subject(s) - drop (telecommunication) , exciton , condensed matter physics , magnetic field , electron hole , electron , nucleation , radius , semiconductor , free electron model , materials science , physics , thermodynamics , quantum mechanics , telecommunications , computer security , computer science
An experimental study of hysteresis in the luminescence of electron—hole drops in Ge upon the action of a magnetic field is presented. In the magnetic field the free electron and hole flows onto a drop decrease. This results in an increase of the nucleation rate of the drops and also the decrease of the drop radius. The principal experimental results are: 1) The threshold phase diagram obtained in the presence of magnetic field is different from that for H = 0; 2) the new hysteresis loop is found on varying the magnetic field; 3) the contribution from free carrier current in the stationary drop radius is determined and it follows that the value of the cross‐section for the exciton formation process is of the order of 2 × 10 −11 cm 2 .