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Influence of Dielectric Screening and Band Nonparabolicity on Ionized Impurity Scattering in Doped Semiconductors
Author(s) -
Neumann H.,
Tsipivka Yu. I.,
Unger K.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221050217
Subject(s) - ionized impurity scattering , condensed matter physics , impurity , scattering , semiconductor , doping , dielectric , ionization , electron mobility , electron , chemistry , physics , ion , optics , optoelectronics , quantum mechanics
Dielectric screening beyond the Thomas‐Fermi approximation and band nonparabolicity are included in the theory of ionized impurity scattering in semiconductors. The resulting mobilities are always smaller than the Brooks‐Herring mobility. The corrections to the Brooks‐Herring mobility increase with increasing nonparabolicity. Numerical results are given for the electron mobility due to ionized impurity scattering in n‐type GaAs, InAs, and InSb.