Premium
Theoretical Study of Single Vacancies in GaSb
Author(s) -
Brescansin L. M.,
Fazzio A.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221050139
Subject(s) - vacancy defect , impurity , electron , condensed matter physics , symmetry (geometry) , materials science , crystallography , atomic physics , chemistry , physics , quantum mechanics , geometry , mathematics
Using clusters with 17 atoms the electronic structure of Ga and Sb single vacancies is studied in GaSb, using the MS‐Xα method. For the Ga vacancy an impurity level of t 2 symmetry is obtained, occupied with three electrons, and in the case of the Sb vacancy two impurity levels are obtained, one a fully occupied a 1 level and a t 2 level occupied with one electron.