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Electrical Conduction of GeSe at Low Temperatures
Author(s) -
Ishihara Y.,
Nakada I.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221050131
Subject(s) - thermal conduction , condensed matter physics , impurity , hall effect , acceptor , electrical resistivity and conductivity , materials science , germanium , excitation , activation energy , atomic physics , chemistry , physics , silicon , organic chemistry , quantum mechanics , metallurgy , composite material
The Hall coefficient and resistivity of germanium monoselenide were measured between 320 and 1.5 K. The ionization energy of the acceptor is estimated from the temperature dependence of the Hall coefficient. It changes from 3.9 to 5.3 meV according to the heat treatment. The impurity conduction is found to occur at low temperatures. There appear two activation energies corresponding to impurity conduction, the first of about 1.5 meV and the other of about 0.5 meV. The former value can be associated with the thermal excitation of holes from the Fermi level to a mobility edge in the upper Hubbard band.