The Dependence of Magnetic Ordering Temperature in Amorphous Semiconductors on Paramagnetic Centre Concentration | Zendy

Khokhlov A. F. | Zendy; Mashin A. I. | Zendy; Satanin A. M. | Zendy

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The Dependence of Magnetic Ordering Temperature in Amorphous Semiconductors on Paramagnetic Centre Concentration

Author(s) -

Khokhlov A. F.,

Mashin A. I.,

Satanin A. M.

Publication year - 1981

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221050114

Subject(s) - antiferromagnetism , paramagnetism , condensed matter physics , ferromagnetism , annealing (glass) , electron paramagnetic resonance , magnetic semiconductor , amorphous solid , materials science , ion , nuclear magnetic resonance , chemistry , crystallography , physics , metallurgy , organic chemistry

In silicon amorphized by ion implantation (a‐Si) the dependence of magnetic ordering temperature (θ) on localized spin concentration ( N s ) is studied by EPR method. N s changes by varying the Ne + ion dose from 6 × 10 14 to 2 × 10 17 cm −2 and sample annealing. From the comparison of the data obtained with literature ones conclusions are made about the existence of two critical values of N s in a‐Si (≈ 10 19 and ≈ 2 × 10 20 cm −3 ), when a transition occurs from paramagnetism to antiferromagnetism (at T < θ) and from antiferromagnetism to ferromagnetism, respectively.

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