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Impurity Vibrational Properties of Ga in InP Crystals
Author(s) -
Jahne E.,
Kleinert P.,
Kh. Bairamov B.,
Topoprov V. V.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221040217
Subject(s) - impurity , raman spectroscopy , raman scattering , infrared , phonon , materials science , molecular vibration , scattering , ion , ionized impurity scattering , absorption (acoustics) , reflection (computer programming) , infrared spectroscopy , analytical chemistry (journal) , molecular physics , chemistry , optics , condensed matter physics , physics , organic chemistry , chromatography , computer science , composite material , programming language
A theoretical and experimental study is undertaken on the vibrational mode frequencies, infrared and Raman response functions of isolated substitutional Ga impurities in InP. The calculations are based on the existing rigid‐ion and defect models for isolated impurities in zincblende lattices. They yield an impurity‐induced infrared absorption and Raman scattering in the regions a few cm −1 above the maximum TA, LA, and optical phonon frequencies. Experimentally the infrared reflection and Raman scattering are measured of InP containing 1% Ga impurities. A local mode is observed 4.5 cm −1 above the LO(Γ) frequency of InP. From these experimental data the relative force constant change around the Ga impurity is estimated to Δ f/f ≈ 0.14.