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Electronic States of CdIn 2 Se 4 and ZnIn 2 Se 4 : Role of the Cation Pseudovacancies
Author(s) -
Margaritondo G.,
Katnani A. D.,
Lévy F.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221030233
Subject(s) - valence (chemistry) , synchrotron radiation , electronic structure , density of states , semiconductor , semimetal , photoemission spectroscopy , spectral line , condensed matter physics , spectroscopy , band gap , ion , atomic physics , valence band , materials science , chemistry , x ray photoelectron spectroscopy , physics , nuclear magnetic resonance , organic chemistry , quantum mechanics , optoelectronics , astronomy
The two defect‐zincblende semiconductors of the II–III 2 –VI 4 family, CdIn 2 Se 4 and ZnIn 2 Se 4 , contain a regular network of vacant cation zincblende sites with several properties similar to those of true vacancies. Electronic state calculations predict dramatic effects of these pseudovacancies in the upper valence band. These effects are searched for by photoemission spectroscopy with synchrotron radiation. The spectra do reveal the states related to the pseudovacancies. However, they rule out a theoretically predicted pseudovacancy gap in the valence band density of states. These results agree with the recent hypothesis of a partial cancellation of the pseudovacancy effects by lattice relaxation around each pseudovacancy.