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Negative Magnetoresistance in Zinc Selenide
Author(s) -
Ivanova G. N.,
Nedeoglo D. D.,
Simashkevich A. V.,
Timchenko I. N.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221030223
Subject(s) - condensed matter physics , magnetoresistance , impurity , magnetic field , magnetic moment , atmospheric temperature range , magnetic semiconductor , fermi level , chemistry , electron , ohmic contact , curie–weiss law , curie temperature , materials science , doping , ferromagnetism , physics , nanotechnology , organic chemistry , quantum mechanics , layer (electronics) , meteorology
The effect of negative magnetoresistance (NMR) is found and studied in low‐ohmic n‐ZnSe crystals with electron concentrations from 2.1 × 10 16 to 4.9 × 10 17 cm −3 which is manifested as a reduction in resistance of the crystals in the magnetic field. The investigations are made in the temperature range 1.65 to 300 K. Basic regularities of NMR in specimens with an electron concentration of about 10 17 cm −3 are well correlated with the Toyozawa theory developed on the assumption that in the impurity band of a semiconductor states exist partly filled with electrons. The relation between NMR and temperature and magnetic field for these specimens is described by the Curie‐Weiss law down to the Néel temperature T N = 2 K; at lower temperatures a deviation is observed. A relationship between the localized magnetic moment and magnetic field is found and explained. In lightly doped n‐ZnSe crystals where the impurity conduction is of hopping nature, the NMR effect is explained qualitatively on the assumption that the magnetic field affects the density of states near the Fermi level.