Premium
Peculiarities of an Electromotive Force Arising in a Semiconductor in a Non‐Homogeneous Magnetic Field (I)
Author(s) -
Gulamov Sh. A.,
Katulevskii Yu. A.,
Muminov R. A.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221030213
Subject(s) - electromotive force , homogeneous , magnetic field , physics , condensed matter physics , transverse plane , semiconductor , electric field , current (fluid) , field (mathematics) , quantum electrodynamics , classical mechanics , quantum mechanics , mathematics , statistical physics , engineering , structural engineering , thermodynamics , pure mathematics
The possibility of arising of both, longitudinal and transverse electromotive forces (e. m. f.) in a semiconductor placed only into a non‐homogeneous magnetic field is shown firstly. The appearance of the e. m. f. is due to the interaction of the spin and orbital magnetic moments of current carriers with an external non‐homogeneous magnetic field. The spatial distribution of current carriers, that of the electric field, and the expressions for the longitudinal and transverse e. m. f. are found by using the magnetohydrodynamical approximation.