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Investigation of the Dislocation Spin System in Silicon as Model of One‐Dimensional Spin Chains
Author(s) -
Grazhulis V. A.,
Kveder V. V.,
Osipyan Yu. A.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221030208
Subject(s) - electron paramagnetic resonance , dangling bond , spin (aerodynamics) , condensed matter physics , pairing , dislocation , singlet state , chain (unit) , silicon , phonon , materials science , crystallography , physics , chemistry , superconductivity , nuclear magnetic resonance , atomic physics , quantum mechanics , thermodynamics , excited state , optoelectronics
Magnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one‐dimensional model of the spin system according to which the DDB chains are unstable with respect to the pairing of the neighbouring bonds ( S = 1/2) to form singlet pairs ( S = 0) at T ≦ 50 K, and, apart from that, possess a softened phonon spectrum. It is shown that both these peculiarities in the DDB chain properties can give rise to strong anomalies in the behaviour of the DDB‐EPR spectrum.