Acceptor States in Zero‐Gap Semiconductors in Magnetic Field. Theory for Short‐Range Defect potential | Zendy

Gortel Z. W. | Zendy; Szymański J. | Zendy; Świerkowski L. | Zendy

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Acceptor States in Zero‐Gap Semiconductors in Magnetic Field. Theory for Short‐Range Defect potential

Author(s) -

Gortel Z. W.,

Szymański J.,

Świerkowski L.

Publication year - 1981

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221030148

Subject(s) - acceptor , zero (linguistics) , condensed matter physics , semiconductor , range (aeronautics) , magnetic field , band gap , field (mathematics) , materials science , atomic physics , physics , quantum mechanics , optoelectronics , mathematics , philosophy , linguistics , pure mathematics , composite material

The high magnetic field behaviour of resonance acceptor states in zero‐gap semiconductors produced by short‐range defect potential is studied in the actual structure of an inverted Γ 8 ‐band. Results of numerical calculations for different zero‐field acceptor level energies are presented and optical selection rules for transitions between acceptor states and Γ 6 and Γ 8 Landau levels are given.

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