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Acceptor States in Zero‐Gap Semiconductors in Magnetic Field. Theory for Short‐Range Defect potential
Author(s) -
Gortel Z. W.,
Szymański J.,
Świerkowski L.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221030148
Subject(s) - acceptor , zero (linguistics) , condensed matter physics , semiconductor , range (aeronautics) , magnetic field , band gap , field (mathematics) , materials science , atomic physics , physics , quantum mechanics , optoelectronics , mathematics , philosophy , linguistics , pure mathematics , composite material
The high magnetic field behaviour of resonance acceptor states in zero‐gap semiconductors produced by short‐range defect potential is studied in the actual structure of an inverted Γ 8 ‐band. Results of numerical calculations for different zero‐field acceptor level energies are presented and optical selection rules for transitions between acceptor states and Γ 6 and Γ 8 Landau levels are given.