Premium
Mobility and Recombination Coefficient of Charge Carriers in Disordered Pentacene
Author(s) -
Maruyama Y.,
Bässler H.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221030129
Subject(s) - pentacene , photocurrent , charge carrier , materials science , recombination , annealing (glass) , electron mobility , photoconductivity , analytical chemistry (journal) , electrode , molecular physics , optoelectronics , chemistry , thin film transistor , chromatography , composite material , gene , biochemistry
Both transient and stationary photoconduction of pentacene layers prepared by vapor deposition at 180 K and annealing at 295 K is studied in a surface electrode arrangement. Except at low light intensities photocurrents are recombination controlled. A ratio γ/μ = 1.8 × 10 −7 V cm is obtained. The sum of electron and hole mobility monitored in a time interval 5 × 10 −5 to 5 × 10 −4 s after carrier generation is 10 −2 cm 2 /Vs. It agrees with a value determined previously employing the initial photocurrent pulse method thus proving the reliability of that method to monitor transport properties of disordered solids on a short time scale.