Premium
Theory of Tunneling into Size‐Quantised Films with Application to Lead
Author(s) -
Cottey A. A.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221020216
Subject(s) - quantum tunnelling , electron , physics , momentum (technical analysis) , phase (matter) , condensed matter physics , scattering , effective mass (spring–mass system) , semiconductor , atomic physics , quantum mechanics , computational physics , finance , economics
Electrons tunneling through an oxide layer into a sufficiently thin metal or semiconductor film can resonate with the discrete “particle‐in‐a‐box” energy levels in the film. The theory of this effect is given in the case that the electrons couple with only one “standing Bloch wave”. It is possible to deduce from experiment five parameters of the relevant group of electrons. These are the energy, velocity, effective mass, surface scattering phase shift η, and dη/dk ( crystal momentum). Values of the energy, velocity, and phase shift for Pb are presented, deduced from experimental data of Jaklevie and Lambe, and an approximate value of the effective mass. (The value of phase shift published earlier by the present author is revised).