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Temperature Dependence of Bond charge Vibration in Silicon
Author(s) -
Pietsch U.,
Unger K.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221020208
Subject(s) - silicon , vibration , charge (physics) , lattice vibration , materials science , atomic physics , displacement (psychology) , thermal , amplitude , lattice (music) , molecular physics , condensed matter physics , chemistry , physics , thermodynamics , optoelectronics , optics , phonon , quantum mechanics , psychology , psychotherapist , acoustics
With help of a bond charge model introduced in a previous paper the thermal motion of the silicon atoms and that of the bond charge (BC) is separated. This analysis is made with structure factor data from silicon of Aldret and Hart, measured at two temperatures. The observed temperature dependence of the BC is caused mainly by the larger vibration amplitudes of the BC's in comparison with that of the Si atoms. Experimentally, a change of the BC amount is not detectable. The mean square displacement of the BCs is 4.2 times larger than that of the silicon atoms for 92.2 and 293.2 K, respectively. This fact is explained on the basis of the changing amount of the BC in the vibrating lattice, which corresponds to the results of calculations by Maschke and Baldereschi.