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Acceptor Pair‐Bound Exciton Complexes in Semiconductors
Author(s) -
Molva E.,
Mag.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221020205
Subject(s) - exciton , acceptor , doping , semiconductor , photoluminescence , binding energy , bound state , atomic physics , line (geometry) , biexciton , molecular physics , materials science , chemistry , physics , condensed matter physics , optoelectronics , quantum mechanics , geometry , mathematics
The evolution of the principal bound exciton (PBE) line, for bound exciton‐neutral acceptor(s) complex(es), between low (≦ 10 16 cm −3 ) and high (>10 17 cm −3 acceptor concentrations in semiconductors, is studied. Photoluminescence experiments are performed in ZnTe, for the five wellknown acceptors Li, Na, Ag, Cu, Au and for several doping levels. High concentrations provide an asymmetric broadening with undulations and a shift to lower energies of the PBE line. Semiempirical calculations are made for the neutral acceptor pair‐bound exciton complex. In ZnTe good agreement is obtained with experiment. The calculations demonstrate that the empirical relation ΔE(R) = E 0 , exp (−R/R 0 ) 3 is a good and simple analytical approximation of the bound exciton localization energy shift, when the exciton is bound on a neutral acceptor pair, with a pair separation R. These calculations permit to evaluate the energy shift of the PBE line maximum for acceptors in highly doped semiconductors.