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Dielectric Properties of Bi 1− x Sb x Alloys at the Semiconductor‐Semimetal Transition
Author(s) -
Rudolph R.,
Krüger H.,
Fellmuth B.,
Herrmann R.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221020127
Subject(s) - semimetal , condensed matter physics , dielectric , semiconductor , lattice constant , band gap , materials science , bismuth , electron , physics , optics , optoelectronics , diffraction , quantum mechanics , metallurgy
The composition dependence of the lattice dielectric constant of semiconducting Bi 1− x Sb x alloys is investigated by means of helicon wave propagation for B∥C 1 in high magnetic fields in the neighbourhood of the semiconductor‐semimetal transition. In contrast to the smooth variation of the parameters of the isoenergy surface of the electrons, in the neighbourhood of the transition first a rapid increase of the dielectric constant is observed, followed by a discontinuous drop when the band overlap begins. The comparison with theoretical calculations allows the conclusion that the lattice dielectric constant must be correlated with the indirect band gap of the alloy – the parameter of the semiconductor‐semimetal transition.