Premium
The Metal‐Insulator Transition in Electron‐Hole Systems
Author(s) -
Balslev I.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221010237
Subject(s) - metal–insulator transition , condensed matter physics , semiconductor , insulator (electricity) , phase transition , transition metal , electron hole , materials science , electron , metal , fermi gas , physics , chemistry , quantum mechanics , biochemistry , optoelectronics , metallurgy , catalysis
Theoretical studies of the metal‐insulator transition in electron‐hole systems in indirect semiconductors are presented. The model is based on various screening theories and on thermodynamical continuity requirements. In case of Debye‐Hückel‐like screening the phase diagrams of Si and Ge contain two separate transitions, the gas‐liquid and the metal‐insulator transition. Stronger and weaker dependence of the band energies on the free pair density favors the metal‐insulator and the gas‐liquid transition, respectively.