On the Phase Separation of Carriers in Nitrogen‐Doped GaP | Zendy

Thuselt F. | Zendy

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On the Phase Separation of Carriers in Nitrogen‐Doped GaP

Author(s) -

Thuselt F.

Publication year - 1980

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221010213

Subject(s) - impurity , doping , excited state , exciton , electron , plasma , atomic physics , phase (matter) , nitrogen , electron hole , separation (statistics) , materials science , molecular physics , condensed matter physics , chemistry , physics , optoelectronics , organic chemistry , quantum mechanics , machine learning , computer science

Unusual phase separation of excited carriers in isoelectronically doped GaP is discussed in terms of two models: (i) a perturbed neutral electron‐hole plasma, and (ii) electrons assumed to be strongly localized at the isoelectronic impurities embedded in a non ‐ neutral electron‐hole plasma. For low carrier densities where excitons are stable particles due to low screening, the special situation involving nitrogen pairs is taken into account.

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