Premium
On the Phase Separation of Carriers in Nitrogen‐Doped GaP
Author(s) -
Thuselt F.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221010213
Subject(s) - impurity , doping , excited state , exciton , electron , plasma , atomic physics , phase (matter) , nitrogen , electron hole , separation (statistics) , materials science , molecular physics , condensed matter physics , chemistry , physics , optoelectronics , organic chemistry , quantum mechanics , machine learning , computer science
Unusual phase separation of excited carriers in isoelectronically doped GaP is discussed in terms of two models: (i) a perturbed neutral electron‐hole plasma, and (ii) electrons assumed to be strongly localized at the isoelectronic impurities embedded in a non ‐ neutral electron‐hole plasma. For low carrier densities where excitons are stable particles due to low screening, the special situation involving nitrogen pairs is taken into account.