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Short‐Time Carrier Transport in Amorphous Pentacene
Author(s) -
Hesse R.,
Bässler H.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221010205
Subject(s) - pentacene , amorphous solid , trapping , materials science , substrate (aquarium) , deposition (geology) , chemical vapor deposition , layer (electronics) , optoelectronics , chemical physics , analytical chemistry (journal) , chemistry , thin film transistor , nanotechnology , crystallography , organic chemistry , ecology , paleontology , oceanography , sediment , geology , biology
Motion of holes generated in an amorphous pentacene layer by a N2 laser flash is examined within a time range 10 ns to 1 p. Pentacene layers are prepared by vapour deposition onto a substrate held a t 140 K. An initial current spike is observed which is attributed to motion of holes with an short‐time mobility of the order of 0.1 cm 2 /Vs. Subsequently, carrier trapping occurs a t a rate constant > 10 7 s −1 . The temperature dependence of the mobility is interpreted in terms of hopping through an array of hopping sites distributed in energy according to a Gaussian distri‐bution function.