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Single‐Site Theory of Wannier Excitons in Disordered Semiconductors 11. Numerical Results
Author(s) -
Fischbeck H. J.,
Strehlow R.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221010203
Subject(s) - exciton , semiconductor , wannier function , condensed matter physics , impurity , doping , simple (philosophy) , electronic band structure , dielectric , distribution (mathematics) , space (punctuation) , physics , materials science , statistical physics , quantum mechanics , mathematics , mathematical analysis , philosophy , epistemology , linguistics
The VKE model for semiconducting alloys (mixed crystals) and the point scatterer model with both, a discrete and a continuous distribution of impurity levels as a model for heavily doped and glassy semiconductors, respectively, are considered in a simple parabolic two‐band structure which can be direct and indirect as well. It allows to handle analytically the space integrals occurring in the expression for the dielectric function, which is given in the first part of this paper. In dependence of various parameters 1s exciton lines are calculated in these models mainly in a direct band structure. In the VKE model also indirect bands are studied.