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Electrical Conductivity of Ammonium Bromide
Author(s) -
Taylor B. E.,
Laskar A. L.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221010145
Subject(s) - vacancy defect , enthalpy , plateau (mathematics) , conductivity , arrhenius equation , atmospheric temperature range , ionic conductivity , activation energy , electrical resistivity and conductivity , thermal conduction , materials science , proton , analytical chemistry (journal) , doping , polarity (international relations) , chemistry , thermodynamics , crystallography , physics , electrode , mathematical analysis , mathematics , optoelectronics , quantum mechanics , chromatography , electrolyte , composite material , biochemistry , cell
The electrical conductivity of NH 4 Br single crystals is measured by both ac and dc techniques over the temperature range 50 to 130 °C. The dc conductivity as a function of temperature in both, pure and Cd 2+ doped NH 4 Br samples shows excellent Arrhenius behavior. The activation enthalpy for conduction is 1.14 eV. Ac measurements exhibit a pronounced frequency dependent plateau at lower temperatures (≈ 50 to 100 °C). This plateau is believed to be due to a “proton loss”. Due to the existence of the plateau that masks any extrinsic region, the dc technique is more useful in the study of ionic defects in NH 4 Br. Assuming that transport is due to a vacancy mechanism, the enthalpy of vacancy migration is estimated to be 0.55 eV. The polarity of the vacancy is not uniquely determined.