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Study of the “Blocking Effect” for Fast Electrons in a Silicon Crystal
Author(s) -
Popov D. E.,
Plotnikov S. V.,
Kaplin V. V.,
Vorobiev S. A.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221010142
Subject(s) - electron , silicon , atomic physics , crystal (programming language) , excitation , cathode ray , physics , intensity (physics) , optics , nuclear physics , quantum mechanics , optoelectronics , computer science , programming language
Abstract The effect of intensity inversion in the patterns of angular distribution of the electrons with energies up to 2.5 MeV scattered along the low‐index directions of a thin silicon crystal is studied. This phenomenon is observed when the angle of beam incidence relative to a low‐index axis of the crystal is large compared with the critical angle of channeling. The discussion is given in the scope of a model based upon bound states of channeled electrons, as a result of excitation of secondary bound states of electrons with atomic rows and planes.