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Peculiarities of the Magnetoresistance of Hg 1− x Mn x Te
Author(s) -
Davydov A. B.,
Ponikarov B. B.,
Tsidilkovskii I. M.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221010113
Subject(s) - magnetoresistance , impurity , condensed matter physics , acceptor , hall effect , manganese , magnetic field , electron , magnetic moment , conduction band , ion , materials science , chemistry , physics , metallurgy , quantum mechanics , organic chemistry
On semimetallic Hg 1− x Mn x Te samples with 0.02 ≦ x ≦ 0.06 the dependences of the Hall constant‐R H and longitudinal, ϱ ZZ , and transverse, ϱ xx , magnetoresistances are investigated on the induction of magnetic field B in the region of 0 ≦ B ≦ 50 kG at temperatures 1.6 ≦ T ≦ 40 K. A maximum of ϱ xx (B) observed in 5 to 7 kG fields at helium temperatures is accounted for by the contributions which both, conduction band electrons and impurity acceptor band holes, make to the transport processes. The decrease in magnetoresistance in fields B > 7 kG is attributed to the increase of the mobility of carriers in the impurity band due to the ordering of magnetic moments of manganese ions in the magnetic field. It is proved that the maximum ϱ xx (T) at 7 ≦ B ≦ 12 kG occurring at temperatures between 2.5 and 5 K is not a thermooscillation peak.