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Comments on the Moss Formula
Author(s) -
Gupta V. P.,
Ravindra N. M.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000240
Subject(s) - refractive index , moss , semiconductor , dielectric , dielectric function , band gap , energy (signal processing) , index (typography) , function (biology) , physics , materials science , optics , condensed matter physics , mathematics , optoelectronics , quantum mechanics , computer science , biology , botany , evolutionary biology , world wide web
An analysis is given of the well‐known Moss formula connecting the energy gap to the refractive index of semiconductors. Based on Penn's model for the dielectric function of semiconductors and the treatment of Wemple, the refractive index is related to the energy gap. For small gaps, the relation is shown to reduce to the earlier predicted linear form.