Premium
Analysis of the Phonon Drag Thermoelectric Power of the Doped Semiconductor at Low Temperatures Application to p‐Doped Ge
Author(s) -
Dubey K. S.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000235
Subject(s) - phonon drag , seebeck coefficient , condensed matter physics , thermoelectric effect , phonon , materials science , semiconductor , thermoelectric materials , phonon scattering , doping , drag , physics , thermodynamics , optoelectronics
The phonon drag contribution to the thermoelectric power of five phosphorus doped Ge samples with carrier concentrations of 1.2×10 23 to 1.1×10 24 m −;3 are studied in the temperature range 1 to 5 K. The variation of the phonon drag thermoelectric power with the reduced Fermi energy η*, the density of the states effective mass m *, the carrier concentration n , and the deformation potential E d are also studied to see the role of the electron—phonon scattering relaxation rate in the analysis of the phonon drag contribution of the thermoelectric power of the doped semiconductor. The variation of the thermoelectric power with the lattice thermal conductivity is also reported in the entire temperature range of study. An analytical expression is also formulated to calculate an approximate value of the phonon drag thermoelectric power of the doped sample at low temperatures.