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The Two‐Phonon Resonant Effect in Far‐Infrared Reflectivity of HgSe
Author(s) -
Witowski A. M.,
Grynberg M.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000203
Subject(s) - phonon , reflectivity , dielectric function , semiconductor , condensed matter physics , dielectric , infrared , materials science , band gap , spectral line , far infrared , free carrier , function (biology) , optoelectronics , optics , physics , quantum mechanics , evolutionary biology , biology
Reflectivity spectra of HgSe with various carrier concentrations are measured in the spectral region from 80 to 600 cm −;1 at 6, 80, and 300 K. Their features are well explained by the theoretical dynamic dielectric function including the dispersive interband part. This part is evaluated using Kane's model of band structure. The properties of an additional mode observed in zero gap semiconductors can be well explained by means of two‐phonon resonant process.