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The Mobility of Electrons and Holes in HgTe in the Temperature Range of Intrinsic Conduction
Author(s) -
Dziuba Z.,
Wróbel J.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000202
Subject(s) - thermal conduction , condensed matter physics , electron mobility , electron , effective mass (spring–mass system) , atmospheric temperature range , limiting , scattering , hall effect , conductivity , range (aeronautics) , phonon , materials science , magnetic field , phonon scattering , chemistry , physics , optics , thermodynamics , quantum mechanics , engineering , mechanical engineering , composite material
HgTe samples containing no acceptors are studied. The results of the investigation of Hall coefficient and conductivity versus magnetic field up to 20 kG in the temperature range 4 up to 100 K are presented. Concentration and mobility of electrons and holes in the intrinsic range of the conductivity are calculated. Density state effective mass of holes m h = 0.3 m 0 is determined. It is shown that acoustic and optical phonon scattering are most important modes limiting the hole mobility.