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Exciton Effects in Photoconductivity of GaAs
Author(s) -
Kravchenko A. F.,
Nazintsev V. V.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000141
Subject(s) - exciton , photoconductivity , photocurrent , spectral line , crystal (programming language) , photoluminescence , absorption spectroscopy , materials science , epitaxy , absorption (acoustics) , recombination , optoelectronics , molecular physics , chemistry , physics , condensed matter physics , optics , nanotechnology , biochemistry , layer (electronics) , composite material , astronomy , computer science , gene , programming language
Photoconductivity (PC) and photoluminescence (PL) spectra are investigated on epitaxial GaAs at T = 2 to 50 K. According to the way excitons manifest themselves, two types of crystals, A and B, are discovered in the PC spectra. In crystals of A‐type, the photocurrent maximum corresponds to the exciton maximum in absorption spectra; in crystals of B‐type, vice versa, the photocurrent minimum corresponds to the exciton maximum in the absorption spectra. In crystals of A‐type the position of the earlier observed lines b (1.5154 eV) and d (1.5175 eV) is defined more precisely, and new lines a (1.5141 eV), c (1.5167 eV), and e (1.5185 eV) are registered. An identification of the observed lines is carried out. The influence of temperature and additional illumination on the PC spectra of crystals of both types is studied. The results of investigation show the decisive role of the recombination processes in the volume and on the surface of a crystal in the formation of excitons in PC spectra.