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Four‐Photon Transitions in Semiconductors
Author(s) -
Hassan A. R.,
Raouf R.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000140
Subject(s) - semiconductor , photon , two photon absorption , perturbation theory (quantum mechanics) , attenuation coefficient , absorption (acoustics) , perturbation (astronomy) , physics , atomic physics , computational physics , condensed matter physics , quantum mechanics , optics , laser
Four‐photon interband electronic transitions are theoretically investigated in semiconductors. Expressions for the absorption of four‐photons are calculated using fourth‐order perturbation theory for four different band models. The results show that the five‐band model gives the dominant contribution to the absorption coefficient. A numerical application for the case of ZnS is in agreement with available experimental results.