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Scattering by Clusters in Compensated Semiconductors
Author(s) -
Gerlach E.,
Harbecke B.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000119
Subject(s) - semiconductor , scattering , impurity , interference (communication) , electrical resistivity and conductivity , ionization , ionized impurity scattering , impact ionization , computational physics , materials science , atomic physics , optoelectronics , condensed matter physics , physics , optics , computer science , telecommunications , quantum mechanics , ion , channel (broadcasting)
The energy‐loss method is applied to calculate an expression for the dc resistivity of compensated semiconductors assuming scattering by clusters of the ionized impurities. A numerical example is given in which the effects of interference and screening become apparent.