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Optical Orientation of the Carriers in an Electron—Hole Plasma in CdS Crystals
Author(s) -
Gubarev S.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000108
Subject(s) - electron hole , electron , hanle effect , excitation , plasma , circular polarization , atomic physics , physics , magnetic field , polarization (electrochemistry) , condensed matter physics , radiation , optics , chemistry , quantum mechanics
The degree of circular polarization of the electron—hole plasma recombination radiation is measured under high power excitation with circular polarized light. Depolarization of the radiation on the high‐energy edge of the spectrum is observed in the transverse magnetic field. The experimental results are explained in terms of different populations in the electron and hole spin subbands. The spin disorientation times for electron T sc and hole T sh systems and the life time of the carriers τ in the electron—hole plasma are defined from the Hanle effect and are equal to T se = (3 to 5) × × 10 −12 s, T sh = (10 to 15) × 10 −12 s and τ = (80 to 120) × 10 −12 s.