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On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in Silicon
Author(s) -
Marklund S.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221000106
Subject(s) - partial dislocations , dangling bond , silicon , condensed matter physics , core (optical fiber) , valence (chemistry) , crystallography , materials science , physics , chemistry , dislocation , composite material , quantum mechanics , metallurgy
By considering valence force potentials the cores of the glide‐set 30° and 90° partial dislocations in silicon are investigated. It is shown that the 30° partial probably does not contain dangling bonds, while on the other hand dangling bonds at the 90° partial are more likely to exist as pairing of bonds across its core is opposed by a strong shear field. The implications of the results on the electron states of the partials are briefly discussed.